High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

[摘要]：Nonvolatile memory ferroelectric thin-film transistors (FeTFTs) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of approximate to 1 cm(2) V-1 s(-1) and large memory window of approximate to 20V are achieved through the organic ferroelectric-inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by +/- 20V switching for ZnO- and pentacene-FeTFTs.

[全文传递流程]：

一般上传文献全文的时限在1个工作日内