[摘要]：Interfaces between transition metal oxide compounds provide a setting where correlated behavior can emerge Essential to interface studies are substrates that have a single atomic plane termination By tuning the vapor pressure of La above the surface of La0.18Sr0.82Al0.59Ta0.41O3 (LSAT) during annealing, single-unit-cell steps and predominant A-site (SrO) termination can be achieved
