[摘要]：Commercial electron beam resists are modified into semimetallic resists by doping with 1-3 nm metal nanoparticles which improve the resolution, contrast, strength, dry etching resistance, and other properties of the resist. With the modified resists fine resist nanopatterns from electron-beam lithography are readily converted into 5-50 nm, high-quality multilayers for metallic nanosensors or nanopatterns via ion-beam etching. This method solves the problem of the fabrication of fine (<50 nm) metallic nanodevices via pattern transferring.
