[摘要]：Electronic properties of InAs1-xSbx films with x up to 0.09 have been investigated by reflectance spectra in 1.5-5 eV energy range at room temperature. The real and imaginary parts of the dielectric function were derived by Kramers-Kronig analysis on the reflectance spectra, which show satisfactory agreement with the spectroscopic ellipsometry data. The E-1' and E-1'+Delta(1)' peaks are attributed to electronic interband transitions at the E-1 and E-1+Delta(1) critical points, respectively. The prominent E-2' peaks, which exhibit high reflectivity and large blueshift, are found to be contributed by hybrid resonance due to the cooperative behavior of both E-2-state electrons and plasmons. (c) 2010 American Institute of Physics. [doi:10.1063/1.3501978]
