Indium segregation in AlInN/AlN/GaN heterostructures

[摘要]：AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy. V-defects and channels were observed. In phase-contrast mode, these features were found related to inhomogeneities associated with In-segregation (and/or In-diffusion) and Al-rich surface reconstruction. The electrical characterization via conductive atomic force microscopy showed enhanced conductivity regions related to In-rich traces within channels and V-defects. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3489433]

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