[摘要]：Energy barriers at interfaces of (100)InP with atomic-layer deposited Al2O3 are determined using internal photoemission of electrons. The barrier height between the top of the InP valence band and bottom of the alumina conduction band is found to be 4.05 +/- 0.10 eV corresponding to a conduction band offset of 2.7 eV. An interlayer associated with the oxidation of InP may result in a lower barrier for electron injection potentially leading to charge instability of the insulating stack. A wide-gap P-rich interlayer has a potential to reduce this degrading effect as compared to In-rich oxides. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3496039]
