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[摘要]：The reduction of graphite oxide (GO) thin films was evaluated at 220 degrees C using a combination of infrared (FTIR) and X-ray photoemission spectroscopies (XPS). The results were correlated with electrical resistance measurements. The chemical composition of GO was C-8(OH)(3)O-0.8 and reduced to C-8(OH)(0.5)O-0.3 after nearly 24 h of low-temperature processing, defined as 220 degrees C. The sheet resistance of dropcast GO thin films processed at 220 degrees C in air was 8 k Omega sq(-1), similar to GO reduced at >800 degrees C in an inert atmosphere. |
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