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3-D CMOS Circuits Based on Low-Loss Vertical Interconnects on Parylene-N

  作者 Lahiji, RR; Sharifi, H; Katehi, LPB; Mohammadi, S  
  选自 期刊  IEEE Transactions on Microwave Theory and Techniques;  卷期  2010年58-1;  页码  48-56  
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[摘要]parylene-N is used as a dielectric layer to create ultra low-loss 3-D vertical interconnects and coplanar waveguide (CPW) transmission lines on a CMOS substrate. Insertion loss of 0.013 dB for a 3-D vertical interconnect through a 15-mu m-thick parylene-N

 
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