Void nucleation at a sequentially plasma-activated silicon/silicon bonded interface

[摘要]：Two 4 inch silicon wafers were directly bonded using a sequentially plasma-activated bonding method (i.e. O-2 reactive ion etching (RIE) plasma followed by N-2 microwave (MW) radicals) at room temperature. The bonded wafers were annealed from 200 to 900 d

[全文传递流程]：

一般上传文献全文的时限在1个工作日内