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III-Nitride Schottky Rectifiers With an AlGaN/GaN/AlGaN/GaN Quadruple Layer and Their Applications to UV Detection

  作者 Chang, PC; Lee, KH; Chang, SJ; Su, YK; Lin, TC; Wu, SL  
  选自 期刊  IEEE Sensors Journal;  卷期  2010年10-4;  页码  799-804  
  关联知识点  
 

[摘要]III-nitride Schottky rectifiers (SRs) with (i.e., SR_A) and without (i.e., SR_B) the AlGaN/GaN/AlGaN/GaN quadruple layer were both fabricated. It was found that we could achieve a lower leakage current from SR_A. Under reverse bias, it was found that SR_A

 
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