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A pathway to p-type wide-band-gap semiconductors

  作者 Janotti, A; Snow, E; Van de Walle, CG  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-17;  页码  172109-172109  
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[摘要]Based on first-principles calculations we devise an alternative approach to p-type doping in AlN, ZnO, and ZnMgO. Instead of searching for acceptors on the left of the host atoms in the Periodic Table, we propose to search on the far right. We find that F

 
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