个性化文献订阅>期刊> Nano Letters
 

Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots

  作者 Nilsson, HA; Caroff, P; Thelander, C; Larsson, M; Wagner, JB; Wernersson, LE; Samuelson, L; Xu, HQ  
  选自 期刊  Nano Letters;  卷期  2009年9-9;  页码  3151-3156  
  关联知识点  
 

[摘要]We report on magnetotransport measurements on InSb nanowire quantum dots. The measurements show that the quantum levels of the InSb quantum dots have giant g factors, with absolute values up to similar to 70, the largest value ever reported for semiconductor quantum dots. We also observe that the values of these g factors are quantum level dependent and can differ strongly between different quantum levels. The presence of giant g factors indicates that considerable contributions from the orbital motion of electrons are preserved in the measured InSb nanowire quantum dots, while the level-to-level fluctuations arise from spin-orbit interaction. We have deduced a value of Delta(so) = 280 mu eV for the strength of spin-orbit interaction from an avoided level crossing between the ground state and first excited state of an InSb nanowire quantum dot with a fixed number of electrons.

 
      被申请数(0)  
 

[全文传递流程]

一般上传文献全文的时限在1个工作日内