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[摘要]：Four-level nonvolatile small-molecule 4F(2) memory cells were developed with a sandwiched device structure consisting of an upper Al electrode, upper small-molecule layer (Alq(3), aluminum tris(8-hydroxyquinoline)), Ni nanocrystals surrounded by NiO tunneling barrier, lower small-molecule layer, and bottom Al electrode. In particular, an in situ O-2-plasma oxidation process following Ni evaporation was developed to produce uniformly stable 10 nm Ni nanocrystals surrounded by a NiO tunneling barrier embedded in the small-molecule layer. They presented a memory margin (I-on/I-off ratio) of approximate to 1 x 10(3), a retention time of more than 10(5) s, an endurance of more than 5 x 10(2) erase- and-program cycles, and multilevel cell (MLC) operation, being a terabit nonvolatile memory-cell. A vertically double-stacked 4F(2) multilevel nonvolatile memory cell was also developed, showing a memory margin of approximate to 1 x 10(3) in both the top and bottom memory cells and eight-level cell operation. |
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