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[摘要]：A new scalable noise and small-signal model for deep-submicrometer metal-oxide semiconductor field-effect transistors, which consist of multiple elementary cells is presented in this paper. It allows exact modeling of all noise and small-signal model parameters from elementary cell to large-size device. The scalable rules for noise and small-signal model parameters are given in detail. The experimental and theoretical results show that at same bias condition, good scaling of the noise, and small-signal model parameters can be achieved between the large-size devices and elementary cell. Model verification is carried out by comparison of measured and simulated S-parameters and noise parameters. Good agreement is obtained between the measured and modeled results for 4 x 0.6 x 18 mu m, 8 x 0.6 x 12 mu m, and 32 x 0.6 x 2 mu m gatewidth (number of gate fingers x unit gatewidth x cells) 90-nm gatelength MOSFETs. |
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