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[摘要]：This paper reports on the application of a bilayer polymethylmethacrylate (PMMA)/ZrO2 dielectric in copper phthalocyanine (CuPc) organic field-effect transistors (OFETs). By depositing a PMMA layer on ZrO2, the leakage of the dielectric is reduced by one order of magnitude compared to single-layer ZrO2. A high-quality interface is obtained between the organic semiconductor and the combined insulators. By integrating the advantages of polymer and high-k dielectrics, the device achieves both high mobility and low threshold voltage. The typical field-effect mobility, threshold voltage, on/off current ratio, and subthreshold slope of OFETs with bilayer dielectric are 5.6 x 10(-2) cm(2)/V. S, 0.8 V, 1.2 x 10(3), and 2.1 V/dec, respectively. By using the bilayer dielectrics, the hysteresis observed in the devices with single-layer ZrO2 is no longer present. |
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