[摘要]：The breakdown voltage of new AlGaN/GaN high electron mobility transistors (HEMTs) was increased considerably without sacrificing any other electrical characteristics by proton implantation. The breakdown voltage of proton-implanted AlGaN/GaN HEMTs with 150 KeV 1 X 10(14)-cm(-2) fluence after thermal annealing at 400 degrees C for 5 min under N-2 ambient was 719 V, while that of conventional device was 416 V. The increase of the breakdown volt-age is attributed to the expansion of the depletion region under the 2-D electron gas (2-DEG) channel. The depletion region expanded downward into the GaN buffer layer because implanted protons acted as positive ions and attracted electrons in the 2-DEG channel.
