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[摘要]：Stable nonvolatile conductivity switching and antifuse behavior have been observed in amorphous-TiO2 films in 0.002 cm(2) Ag/amorphous-TiO2/Pt structures. Resistivity switching from a high resistance state of similar to 10(8) Omega to a low resistance state of 1.5 Omega occurs typically at a positive bias threshold of similar to 0.74 V. As expected for a metal-oxide-metal structure, Fowler-Nordheim conduction dominates the high resistance state while the low resistance state is assumed to be due to electric field induced conducting filaments of Ag. For a total charge of > 100 mC under positive bias, antifuse behavior is evidenced. Stability and reversibility of the resistive switching and antifuse behavior were studied. (C) 2008 American Vacuum Society. [DOI: 10.1116/1.2966424] |
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