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[摘要]：A solution of the tungsten imido guanidinato complex W((NPr)-Pr-i)Cl-3[(PrNC)-Pr-i(NMe2)(NPr)-Pr-i] (1) in benzonitrile was used to deposit tungsten nitride carbide (WNxCy) thin films by chemical vapor deposition in the temperature range of 400-750 degrees C. Films grown with 1 were composed of W, N, C, and O as determined by Auger electron spectroscopy. X-ray photoelectron spectroscopy results indicated that no Cl impurity was present in the film. The apparent activation energy in the reaction limited growth regime was 0.54 eV. The films deposited below 500 degrees C were amorphous, while films deposited at and above 500 degrees C were nanocrystalline (grain size < 50 angstrom). The lowest resistivity of 0.98 m Omega cm was obtained for film deposited at 450 degrees C. Films, 45-55 nm thick, deposited at 450-500 degrees C were able to prevent bulk Cu diffusion after vacuum annealing at 500 degrees C for 30 min. The properties of thin films deposited with 1 were compared to those from the isopropyl imido complex, Cl-4(RCN)W((NPr)-Pr-i) (2a, R=CH3, 2b, R=Ph), to provide insight into the effect of imido and guanidinato ligands on film properties. (C) 2008 American Vacuum Society. |
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