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A highly compact active wideband balun with impedance transformation in SiGeBiCMOS

  作者 Godara, B; Fabre, A  
  选自 期刊  IEEE Transactions on Microwave Theory and Techniques;  卷期  2008年56-1;  页码  22-30  
  关联知识点  
 

[摘要]A new conveyor-based single-ended to differential balun is proposed. Thanks to the quasi-absence of passive components, this is an extremely size-efficient,balun (0.036 mm(2)). The use of a new impedance-matching technique makes this balun the first transistor-based solution with controllable port impedances. Fabricated in a 0.35-mu m SiGe BiCMOS technology with f(T) = 45 GHz, the balun shows the following performance: wideband impedance matching at all three ports, good balance between the two outputs (better than 3 dB in amplitude and 13 degrees in phase) over frequency bands extending from 0 to 3 GHz, linear operation for powers up to input powers of -2 dBm, and stability against temperature and process variations.

 
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