[摘要]：Thin high-kappa oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al2O3 or HfO2 layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3495776]
