【文章名】Enhanced Rashba effect in transverse magnetic fields observed on InGaAs/GaAsSb resonant tunneling diodes at temperatures up to T=180 K - art. no. 152107
Enhanced Rashba effect in transverse magnetic fields observed on InGaAs/GaAsSb resonant tunneling diodes at temperatures up to T=180 K - art. no. 152107
[摘要]：A huge Rashba splitting enhanced by an in-plane magnetic field is observed in non-magnetic InGaAs resonant tunneling diodes with GaAsSb barriers. At T = 4 K, the current resonances split by the Rashba effect reveal peak to valley ratios up to 2.5:1 and the energy spacing between the split peaks reaches 30 meV at B = 5 T. The observed peak splitting can be observed at temperatures up to T = 180 K and higher. The Rashba parameters determined on four different samples are between alpha = 0.38 eV angstrom and alpha = 0.78 eV angstrom, which are consistent with theoretical values reported for InAs quantum wells under external electric fields. (C) 2011 American Institute of Physics. [doi:10.1063/1.3650715]
