[摘要]：Long-term stability of high-and low-resistance states in full-organic ferroelectrically gated graphene transistors is an essential prerequisite for memory applications. Here, we demonstrate high retention performance for both memory states with fully saturated time-dependence of the graphene channel resistance. This behavior is in contrast with ferroelectric-polymer-gated silicon field-effect-transistors, where the gap between the two memory states continuously decreases with time. Before reaching saturation, the current decays exponentially as predicted by the retention model based on the charge injection into the interface-adjacent layer. The drain current saturation attests to a high quality of the graphene/ferroelectric interface with low density of charge traps. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676055]
