Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method - art. no. 023506

[摘要]：We analyzed the intrinsic electrical characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method. Based on the back channel potential, the extraction of intrinsic field-effect mobility (mu(FEi)) and parasitic resistance in source (R-s) and drain (R-d) electrodes was performed especially for low V-GS and V-DS conditions. The resulting mu(FEi) showed typical V-GS dependency of amorphous semiconductor TFTs. However, R-s and R-d showed that there can be non-uniformity in source/drain parasitic resistance, which indicates that a separate analysis of the parameters of each electrode is essential for further improvement of the performance of a-IGZO TFTs. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675876]

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