个性化文献订阅>期刊> Applied Physics Letters
 

The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots - art. no. 023108

  作者 Prabhakar, S; Melnik, RVN; Bonilla, LL  
  选自 期刊  Applied Physics Letters;  卷期  2012年100-2;  页码  23108-23108  
  关联知识点  
 

[摘要]We study the anisotropic orbital effect in the electric field tunability of the phonon induced spin-flip rate in quantum dots (QDs). Our study shows that anisotropic gate potential enhances the spin-flip rate and reduces the level crossing point to a lower QDs radius due to the suppression of the Lande g-factor towards bulk crystal. In the range of 10(4)-10(6) V/cm, the electric field tunability of the phonon induced spin-flip rate can be manipulated through strong Dresselhaus spin-orbit coupling. These results might assist the development of a spin based solid state quantum computer by manipulating spin-flip rate through spin-orbit coupling in a regime where the g-factor changes its sign. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675620]

 
      被申请数(0)  
 

[全文传递流程]

一般上传文献全文的时限在1个工作日内