Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes

[摘要]：We measure the modal absorption coefficient of the InGaN quantum wells (QWs) in the absorber section of (Al,In)GaN multisection laser diodes as a function of bias voltage and photon energy using optical gain-spectroscopy. In the examined laser diodes, the

[全文传递流程]：

一般上传文献全文的时限在1个工作日内