[摘要]：Magnetotransport measurements on an In0.16Al0.84N/AlN/GaN gated Hall bar sample have been performed at 0.28 K. By the application of a gate voltage we were able to vary the total two-dimensional electron gas density from 1.83x10(13) to 2.32x10(13) cm(-2). Two frequency Shubnikov-de Haas oscillations indicate occupation of two subbands by electrons. The density of electrons in the first and second sublevels are found to increase linearly with gate voltage with a slope of 2.01x10(12) cm(-2)/V and 0.47x10(12) cm(-2)/V, respectively. And the quantum lifetimes for the first and second subbands ranged from 0.55 to 0.95x10(-13) s and from 1.2 to 2.1x10(-13) s. (c) 2010 American Institute of Physics. [doi:10.1063/1.3490248]
