| |
[摘要]：Electrical transport behaviors of SnO2-based oxides are absolutely essential, either for the understanding of physiochemical properties, or their practical applications. In this paper, an abnormal change in electrical transport is reported upon cobalt doping. A far-from-equilibrium technique-pulsed spray evaporation chemical vapor deposition (PSE-CVD), is investigated for the fabrication of Sn1-xCoxO2-delta (x = 0-0.18) thin films. Upon cobalt doping, the Hall mobility improves gradually and a ten-fold enhancement was noticed for Sn0.82Co0.18O2-delta relative to pure SnO2 films. This unexpected effect induces a dramatic drop in the electrical resistivity. Post-annealing treatment and XPS investigation indicate that the occurrence of surface-stabilized tin interstitials may be the primary reason for the unusual enhancement in conductivity. Cobalt doping not only generates the interstitial tin cations, but also stabilizes to a great extent their presence at the surface. This study may help to illumine new insight for the understanding of doping strategies, and offer a potential route for transport-related applications. |
|
