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[摘要]：Synthesis of various nanostructured semiconductor materials and processing them for different device fabrications has been at the forefront of research for the last two decades. In comparison to spherical nanoparticles, anisotropic materials e.g. nanorods, nanowires, and nanodisks have been widely explored to obtain a better performance of the devices. In addition, it is also well-known that nanomaterials, on doping with suitable impurities, can enhance the device sensitivity and speed. Combining both, we report here the synthesis of micrometer long In2S3 nanosheets and on doping them with Cu(I), we have studied here their photoresponse properties. These nanosheets are synthesized in a high temperature colloidal method following a catalytic thermal decomposition of a single source precursor of In and S. From various TEM, HRTEM, and HAADF images the growth pattern of these sheets is investigated, and the obtained moire fringes at the overlapped region are discussed. Finally, the comparative study of the device performance has been carried out with introducing different amounts of copper in these nanosheets. |
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