Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator

[摘要]：An enhancement of the direct bandgap photoluminescence from Ge layer on silicon with boron or phosphorous delta-doping SiGe layers at room temperature is reported. The n-type delta-doping SiGe layer is proposed to transfer extra electrons to L valley in G

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