[摘要]：Graphene grown by chemical vapor deposition on a Cu foil and transferred onto a Si wafer has been used to fabricate a field effect transistor device that was used to study the sensing of SO2 gas. It was found by in-situ measurements that the SO2 strongly p-dopes the graphene and dramatically shifts its Dirac point. This effect was used to monitor the SO2 gas. The detector can be completely reset by thermal annealing at 100 degrees C in high vacuum. The response and recovery of the detector are faster at higher temperatures. Moreover, the sensitivity of the SO2 graphene detector increases proportionally with increasing temperature. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704803]
