Cl-2/BCl3/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors - art. no. 031204

[摘要]：An effective mesa-isolation process using Cl-based gas chemistry and oxygen plasma post-treatment is investigated to minimize the effect of plasma-induced damage on AlGaN/GaN high-electron mobility transistor (HEMT) performance. Plasma-induced dc bias of

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