Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight-secondary ion mass spectrometry - art. no. 032208

[摘要]：Elemental concentration depth profiles of high-k material stacks for 32 nm node devices and below were acquired by high resolution backscattering spectrometry (HRBS), parallel angle resolved-x-ray photoelectron spectroscopy (pAR-XPS), and time of flight-s

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