Epitaxial growth of (100)-oriented ceria film on c-plane GaN/Al2O3 using YSZ/TiO2 buffer layers by pulse laser molecular beam epitaxy - art. no. 032202

[摘要]：Ceria (CeO2) films with fluorite structures were grown on c-axial-oriented GaN/Al2O3 substrates with and without YSZ/TiO2 double-bridge layer using pulse laser molecular beam epitaxy, respectively. The growth behavior was in situ monitored by reflection h

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