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[摘要]：Focused ion-beam-induced chemical vapor deposition (FIB-CVD) using Au or Si ions and phenanthrene as a precursor gas was performed to obtain carbon-related materials containing no Ga elements. It was confirmed that narrow wires were deposited on a substrate by 15 keV Au and 30 keV Si FIB irradiations under the phenanthrene gas atmosphere. The shape of the deposited materials was, however, strongly affected by the FIB scanning speed, which might be subject to the supply of the phenanthrene gas molecules on the surface during the time interval between each FIB scan. The height of the deposited materials using the 15 keV Au FIB was three to eight times higher than that using the 30 keV Si FIB, although the other FIB parameters were almost the same. This might be explained by the difference in the electronic energy loss of those ions in the deposited materials. From Auger electron spectroscopy, the composition of the deposited material using the Au FIB was found to be a carbon-related material with no Ga but Au atoms inside. (c) 2007 American Vacuum Society. |
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