[摘要]：A nanostructured SnO2 conductometric gas sensor was produced from thermally evaporated Sn clusters using a thermal oxidation process. SnO2 clusters were simultaneously formed in an identical process on a Si3N4 membrane featuring an aperture created by a Focused Ion Beam (FIB). Clusters attached to the vertical edges of the aperture were imaged using a transmission electron microscope. The original morphology of the Sn cluster film was largely preserved after the thermal oxidation process and the thermally oxidized clusters were found to be polycrystalline and rutile in structure. NO2 gas sensing measurements were performed with the sensor operating at various temperatures between 25 degrees C and 290 degrees C. At an operating temperature of 210 degrees C, the sensor demonstrated a normalized change in resistance of 3.1 upon exposure to 510 ppb of NO2 gas. The minimum response and recovery times for this exposure were 45 s and 30 s at an operating temperature of 265 degrees C. The performance of the SnO2 sensor compared favorably with previously published results. Finally, secondary ion mass spectrometry and X-ray photoelectron spectroscopy were used to establish the levels of nitrogen present in the films following exposure to NO2 gas.
