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The role of aluminum oxide buffer layer in organic spin-valves performance - art. no. 053301

  作者 Zhan, YQ; Liu, XJ; Carlegrim, E; Li, FH; Bergenti, I; Graziosi, P; Dediu, V; Fahlman, M  
  选自 期刊  Applied Physics Letters;  卷期  2009年94-5;  页码  53301-53301  
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[摘要]The electronic structures of the 8-hydroxyquinoline-aluminum (Alq(3))/Al2O3/Co interfaces were studied by photoelectron spectroscopy. A strong interface dipole was observed, which leads to a reduction in the electron injection barrier. The x-ray photoelectron spectroscopy spectra further indicate that the Al2O3 buffer layer prevents the chemical interaction between Alq(3) molecules and Co atoms. X-ray magnetic circular dichroism results demonstrate that a Co layer deposited on an Al2O3 buffered Alq(3) layer shows better magnetic ordering in the interface region than directly deposited Co, which suggests a better performance of spin valves with such a buffer layer. This is consistent with the recent results from [Dediu , Phys. Rev. B 78, 115203 (2008)].

 
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