[摘要]：The surface energy and growth kinetics during Ge deposition on Si(001) were modified by growing the films in a phosphine environment. Islands were formed under a H-2 flux as well as in a PH3/H-2 atmosphere, but the morphologies were different. The presence of PH3 not only affects the island shape and size but also the composition profile. The dramatical inhibition of Ge/Si intermixing during growth leads to islands richer in Ge compared to undoped islands.
