Top-gated germanium nanowire quantum dots in a few-electron regime - art. no. 073103

[摘要]：Top gated quantum dots (QDs) have been fabricated from n-type chemically synthesized germanium nanowires (GeNWs) by constricting its length with metal electrode contacts. With an intermediate HfO2 thin film, the constricted GeNW was fully covered by an Om

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