Threading dislocation reduction in transit region of GaN terahertz Gunn diodes - art. no. 072104

[摘要]：An effect of the position of notch-doping layer in 1-mu m GaN Gunn diode on threading dislocations (TDs) distribution is investigated by transmission electron microscopy. Compared with the top-notching-layer (TNL) structure, the bottom-notching-layer (BNL

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