[摘要]：Quaternary InAsSbP quantum dots (QDs) and quantum rings (QRs) are grown on InAs (100) substrates by liquid phase epitaxy. High resolution scanning electron and atomic force microscopes are used for the characterization. The room temperature optoelectronic and magnetoelectric properties of the InAsSbP type-II QDs and QRs are investigated. For the QD-based structures, specific dips on the capacitance-voltage characteristic are revealed and measured, which are qualitatively explained by the holes thermal and tunnel emissions from the QDs. Specific fractures at room temperature are experimentally found in the magnetic field dependence of an electric sheet resistance for the InAsSbP QRs-based sample. (C) 2012 American Institute of Physics. [doi:10.1063/1.3676437]
