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[摘要]：The authors carry out delta-doping at the middle of AlGaAs/GaAs quantum wells employing molecular beam epitaxy and varying the nitrogen coverage up to 0.5 monolayers. Transmission electron micrography and x ray diffraction indicate the introduction of a nitrogen delta-doped layer with precisely controlled position and nitrogen coverage. Photoluminescence spectra obtained for the samples show clear redshift of spectral peak positions depending on the amount of nitrogen, suggesting the band structure is modified by the delta-doping. The growth can be carried out at a substrate temperature of 560 degrees C. The growth temperature, which is high compared with that of standard dilute nitride compounds, could suppress the formation of growth-induced defects, resulting in the weak effect of post-growth thermal annealing on the characteristics of room-temperature photoluminescence. (C) 2012 American Vacuum Society. [DOI:10.1116/1.3678204] |
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