[摘要]：HfO2-based flexible memories were fabricated using a low temperature atomic layer deposition (LTALD) process to examine resistive switching performance. The devices exhibit typical bipolar resistive switching. The endurance and retention behaviors were also investigated. No significant degradation of the device was noted at either room temperature or 85 degrees C, and the current transport mechanism of the high-and low-resistance states are estimated to be Ohmic and trap-assisted current, respectively. The authors propose that this LTALD process will significantly improve fabrication of flexible memories. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.3694003]
