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[摘要]：The authors have measured the range and intensity of backscattered electrons in silicon from a 100 keV source using a process independent method. Backscattered electrons contributed to the total dose of features written in a negative tone electron beam resist. Instead of measuring the height of the resist and using a contrast curve to convert the resist height to dose, the heights of the features were made equal by adjusting the backscattered contribution through dose assignments. Creating features of equal height eliminated the need to use a contrast curve to convert from resist height to total dose. Also, it allowed for measurements of the backscattered contribution from larger distances. Using a circularly symmetric torus pattern, the three-dimensional backscatter problem was reduced to a 1-dimensional Gaussian form. The authors measured the range of the backscattered electrons, beta, to be 31.08 +/- 0.06 mu m. By varying the writing dose of the pattern, we determined the backscatter coefficient, eta, to be 0.63 +/- 0.03. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.3693985] |
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