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[摘要]：We report a solution processed high-k hafnium oxide (HfOx) dielectric used for a solution processed zinc-tin-oxide (ZTO) thin-film transistor (TFT) at the maximum process temperature of 300 degrees C. The HfOx is close to stoichiometric composition (35% hafnium and 65% oxygen), has no impurity related to the solvent or precursor used, and exhibits an amorphous structure. The HfOx is smooth enough, with a rms roughness of 0.33 nm, to be used as a gate insulator for TFT. The ZTO TFT with HfOx exhibits a threshold voltage of 1.18 V, a gate voltage swing of 105 mV per decade, and a field-effect mobility in the saturation region of 1.05 cm(2) V-1 s(-1). The resulting TFT properties are impacted by the formation of nanopores at the HfOx/ZTO interface and nanocrystals at the HfOx/IZO (source/drain) interface. |
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