|
[摘要]:A high-frequency CMOS injection-locked frequency divider (ILFD) is presented by using the distributed LC, series inductor peaking, and multiple-injection techniques. The theoretical analysis for the aforementioned techniques will be given. This ILFD has been fabricated in a 65-nm CMOS process. The core area is 0.4 mm x 0.36 mm without pads. The measured locking range is from 104 to 112.8 GHz, and its power consumption is 7.2 mW from a supply of 1.2 V. |
|