[摘要]：This paper reports high-quality GaSb grown on ZnTe using molecular beam epitaxy with a temperature ramp during growth, and investigates the influence of the temperature ramp on material properties. During growth, in situ reflection-high-energy electron diffraction shows rapid and smooth transition from ZnTe surface reconstruction to GaSb surface reconstruction. Post-growth structural characterization using x-ray diffraction and transmission electron microscopy reveals smooth interface morphology and low defect density. Strong photoluminescence emission is observed up to 200 K. The sample grown with a temperature ramp from 360 to 470 degrees C at a rate of 33 degrees C/min showed the narrowest bound exciton emission peak with a full width at half maximum of 15 meV. (C) 2012 American Vacuum Society. [DOI:10.1116/1.3681280]
