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Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots

作者	Jang, YD; Park, J; Lee, D; Mowbray, DJ; Skolnick, MS; Liu, HY; Hopkinson, M; Hogg, RA

选自	期刊 Applied Physics Letters; 卷期 2009年95-17; 页码 171902-171902

关联知识点

[摘要]：Modulation-doped InAs/GaAs quantum dots (QDs) show bright photoluminescence (PL) at 300 K, linear increase of PL intensity on excitation at 300 K and rather temperature insensitive PL intensity and carrier lifetime, in contrast to undoped QDs. Systematic
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