Influence of GeSi interfacial layer on Ge-Ge optical phonon mode in SiO2 films embedded with Ge nanocrystals

[摘要]：The Ge-Ge optical phonon peak at 300 cm(-1) acquired from amorphous SiO2 films embedded with Ge nanocrystals by Raman scattering is sensitive to the Si content. When the Si concentration is high, a thin GeSi interfacial layer forms around the Ge nanocryst

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