Near-field evidence of local polarized emission centers in InGaN/GaN materials

[摘要]：We study the optical polarization properties of confined structures in InGaN/GaN single quantum well devices. Using a near-field optical setup we investigated the photoluminescence maps with a polarization-modulation method. If the optical emissions have

[全文传递流程]：

一般上传文献全文的时限在1个工作日内