Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

[摘要]：A defect selective passivation method to block the propagation of threading dislocations in GaN epitaxial growth is demonstrated. The defect selective passivation is done by using defect selective chemical etching to locate defect sites, followed by silic

[全文传递流程]：

一般上传文献全文的时限在1个工作日内